@article{Zhang:2021:10.1016/j.jlumin.2021.117946,
author = {Zhang, M and Guo, F and Zhou, Q and Zhong, T and Xiao, B and Zou, L and You, Q and You, B and Li, Y and Liu, X and Liu, H and Yan, J and Liu, J},
doi = {10.1016/j.jlumin.2021.117946},
journal = {Journal of Luminescence},
pages = {1--7},
title = {Enhanced performance through trap states passivation in quantum dot light emitting diode},
url = {http://dx.doi.org/10.1016/j.jlumin.2021.117946},
volume = {234},
year = {2021}
}

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TY  - JOUR
AB  - Device performance enhancement in quantum dot light-emitting diodes (QLEDs) is realized by adding a small amount of insulating polymer polymethyl methacrylate (PMMA) into the emitting quantum dot layer. Pool-Frenkel effect is observed through temperature-dependent current density-voltage experiments, indicating the important role of trap states, and the addition of the insulating PMMA helps to reduce the Poole-Frenkel barrier hence the trap depth. Reduced density and depth of trap states with PMMA are indeed observed through further capacitance measurements. This work contributes to a better understanding on the effects of traps in QLEDs.
AU  - Zhang,M
AU  - Guo,F
AU  - Zhou,Q
AU  - Zhong,T
AU  - Xiao,B
AU  - Zou,L
AU  - You,Q
AU  - You,B
AU  - Li,Y
AU  - Liu,X
AU  - Liu,H
AU  - Yan,J
AU  - Liu,J
DO  - 10.1016/j.jlumin.2021.117946
EP  - 7
PY  - 2021///
SN  - 0022-2313
SP  - 1
TI  - Enhanced performance through trap states passivation in quantum dot light emitting diode
T2  - Journal of Luminescence
UR  - http://dx.doi.org/10.1016/j.jlumin.2021.117946
UR  - https://www.sciencedirect.com/science/article/pii/S0022231321000624?via%3Dihub
UR  - http://hdl.handle.net/10044/1/87567
VL  - 234
ER  - 

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